Title :
Quantum effect simulation of SOI MOSFETs considering impact ionization
Author_Institution :
Bio-Nano Electron. Res. Centre, Toyo Univ., Saitama, Japan
Abstract :
A robust quantum effect device simulator with density gradient model is developed. Characteristics of nanometer scale SOI MOSFETs are simulated including quantum effect and impact ionization for the first time. In extremely small SOI MOSFETs the impact ionization is suppressed.
Keywords :
MOSFET; impact ionisation; semiconductor device models; silicon-on-insulator; SOI MOSFET; density gradient model; impact ionization; quantum effect simulation; Charge carrier density; Current density; Electron mobility; Electrostatics; Equations; Impact ionization; MOSFETs; Potential well; Quantum mechanics; Robustness;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436671
