Title :
Computational investigation of velocity overshoot effects in double gate MOSFETs
Author :
Hou, D.Q. ; Xia, Z.L. ; Du, G. ; Liu, X.Y. ; Wang, Y. ; Kang, J.F. ; Han, R.Q.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
The velocity overshoot effect has been simulated in nano-scale double gate MOSFETs and compared by different simulation method including hydrodynamic model (HD model) and Monte Carlo method (MC method). As we know, the hydrodynamic model tends to overestimate the velocity overshoot, so how much the overestimate of HD model can reach to, and how this overestimate can impair the simulation accuracy of the final device characteristics, is investigated. Based on the simulation results, the quantitative study of the velocity overshoot effect and its related error on the performance of DG MOSFETs are obtained.
Keywords :
MOSFET; Monte Carlo methods; semiconductor device models; Monte Carlo method; double gate MOSFET; hydrodynamic model; velocity overshoot effect; Acceleration; Analytical models; Computational modeling; Electrons; High definition video; Hydrodynamics; MOSFETs; Microelectronics; Optical scattering; Silicon;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436678
