Multiple ion implantation simulation by TSUPREM-IV

Multiple ion implantation is widely used in semiconductor process fabrication. In the TCAD simulation, the influences of the former ion implant on the latter one impurity profile are always omitted. In the paper, we systematically do the simulation by TSUPREM-IV to study the influence of the former ion on the latter one. The implant conditions such as energy, dose and species of the first ion have complicated relation to the second ion. It is found that the damage amount by the former ion determines the change of the latter ion impurity profile. The damage accumulation principle is proposed to describe the interaction quantitatively.