Title :
A new closed-form expression for capacitive coupling of lossy substrate
Author :
Gao, Wei ; Yu, Zhiping
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
A new closed-form expression has been developed to model capacitive substrate coupling on RF CMOS chips. The electric wall approximation for the oxide-substrate interface is used in the model. The closed-form for single and multiple parallel on-chip interconnects are given. The methodology is applicable to some particular 3D cases.
Keywords :
CMOS integrated circuits; approximation theory; coupled circuits; integrated circuit interconnections; interface phenomena; radiofrequency integrated circuits; substrates; RF CMOS chips; capacitive coupling; capacitive substrate coupling; closed-form expression; electric wall approximation; lossy substrate; multiple parallel on-chip interconnect; oxide-substrate interface; Capacitance; Closed-form solution; Couplings; Integrated circuit interconnections; Magnetic noise; Microelectronics; Passivation; Permittivity; Radio frequency; Semiconductor device modeling;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436725
