Scaling properties of GOI MOSFETs in nano scale by full band Monte Carlo simulation

Author

Liu, X.Y. ; Du, G. ; Xia, Z.L. ; Kang, J.F. ; Wang, Y. ; Han, R.Q. ; Yu, H.Y. ; Li, M.-F. ; Kwong, D.L.

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

Volume

2

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

1186

Abstract

The characteristics of both n- and p- GOI MOSFETs are simulated by 2D self-consistent full-band MC method based on quantum Boltzmann equation to evaluate the scaling behaviors between GOI and SOI MOSFETs. The simulation results indicate that both for n and p channel GOI MOSFETs have favorable scaling properties in nano-scale due to the non-stationary transport near source side especially for p channel device. But the surface roughness scattering is a critical issue that might suppress the non-stationary transport. SCE is serious in GOI devices and much thinner Ge layer has to use to optimize the performance.

Keywords

Boltzmann equation; MOSFET; Monte Carlo methods; nanoelectronics; silicon-on-insulator; surface roughness; 2D self-consistent full-band MC method; GOI MOSFET; SOI MOSFET; full band Monte Carlo simulation; nano scale; quantum Boltzmann equation; quantum effect; scaling property; surface roughness scattering; Acoustic scattering; Dielectric substrates; Equations; MOSFET circuits; Microelectronics; Monte Carlo methods; Nanoscale devices; Optical scattering; Particle scattering; Quantum computing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1436736

Filename

1436736