DocumentCode
435947
Title
A physics based analytical model of undoped body MOSFETs
Author
He, Jin ; Xi, Jane ; Chan, Mansun ; Niknejad, Ali ; Chenming Mu
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Volume
2
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
1192
Abstract
A continuous physics based analytic model of undoped (or lightly doped) body MOSFETs has been derived in this paper by incorporating the solution of the Poisson equation into Pao-Sah integrated current equation using SPP approach. The closed form solutions of band bending and the inversion charge as a function of gate voltage and channel voltage were first derived from the combination of Gauss´s law with the Poisson equation. Then, a continuous non-charge-sheet-based analytical model is developed for the undoped body MOSFETs.
Keywords
MOSFET; Poisson equation; semiconductor device models; semiconductor doping; Gauss law; Pao-Sah integrated current equation; Poisson equation; channel voltage; continuous physics; gate voltage; lightly doped body MOSFET; physics based analytical model; undoped body MOSFET; Analytical models; CMOS technology; Doping; Energy states; MOSFETs; Physics; Poisson equations; Positron emission tomography; Silicon; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1436737
Filename
1436737
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