Title :
Modeling the effects of concentration-dependent carrier mobilities and self-heating on the resistance of thermal sensor built on thin silicon on insulator
Author :
Wu, Z.H. ; Lai, P.T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., China
Abstract :
Based on the minority-carrier exclusion theory, an analytical model is developed to explain the operating principle of thermal sensors fabricated on silicon-on-insulator in terms of the carrier-concentration distribution and the temperature dependence of the sensor resistance. The effects of temperature and carrier concentrations on carrier mobilities are included in the model. A two-region model is proposed to improve the resistance model at low bias current. The effect of self-heating on the sensor model is also considered.
Keywords :
carrier density; carrier mobility; electric resistance; minority carriers; semiconductor device models; silicon-on-insulator; temperature sensors; carrier-concentration distribution; concentration-dependent carrier mobilities; minority-carrier exclusion theory; self-heating; temperature dependence; thermal sensor resistance; thin silicon on insulator; Analytical models; Doping; Electrodes; Gas detectors; Silicon on insulator technology; Temperature dependence; Temperature sensors; Thermal engineering; Thermal resistance; Thermal sensors;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436747
