A new 5.5GHz LNA with gain control and turn-off control for dual-band WLAN systems

Author

Feng, Haigang ; Wang, Albert ; Yang, Li-wu

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA

Volume

2

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

1248

Abstract

A new 5-6GHz LNA (low-noise amplifier) for dual-band WLAN system is presented. For the special operation requirement of dual-band RF systems, this LNA features high/low gain control and turn-off control functions. The LNA is designed in TSMC 3-metal 0.35μm SiGe BiCMOS process with an f_T of 49GHz. In high gain mode, the LNA features a forward gain S21 of 14.5dB, a reverse gain S12 of -39.5dB and a noise figure of 2.2dB at 5.5GHz. In low gain mode, the S21 is -11dB, S12 is -52dB and the NF is 13.6dB. The whole circuit consumes 5.2mA dc current under 3V power supply.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; S-parameters; gain control; microwave amplifiers; microwave integrated circuits; wireless LAN; 0.35 micron; 11 dB; 13.6 dB; 14.5 dB; 2.2 dB; 3 V; 39.5 dB; 49 GHz; 5.2 mA; 5.5 GHz; 52 dB; BiCMOS process; SiGe; dual-band RF systems; dual-band WLAN systems; gain control; low-noise amplifier; noise figure; turn-off control; BiCMOS integrated circuits; Control systems; Dual band; Gain control; Germanium silicon alloys; Low-noise amplifiers; Noise figure; Radio frequency; Silicon germanium; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1436759

Filename

1436759