Differentially tuned LC-VCO using modified anti-parallel structure

Author

Moon, Hyunwon ; Lee, Kwyro

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., KAIST, Daejeon, South Korea

Volume

2

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

1321

Abstract

This paper presents a new differentially tuned LC-VCO using a modified anti-parallel. The proposed LC-VCO has lower phase noise and better robustness to the common-mode noise than the previous differentially tuned LC-VCO using the anti-parallel structure. The proposed LC-VCO is implemented using SiGe BiCMOS process. It is tunable from 4.25 to 4.43 GHz and the measured phase noise is -103 dBc/Hz at 100 kHz offset and -119 dBc/Hz at 1 MHz offset over the entire tuning range. Also, its CMRR characteristic is improved about 2dB. Its core current is 1.7 mA at 2.5V supply voltage.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; microwave oscillators; phase noise; voltage-controlled oscillators; 1.7 mA; 2.5 V; 4.25 to 4.43 GHz; CMRR characteristics; SiGe; SiGe BiCMOS process; common-mode noise; common-mode rejection ratio; differentially tuned LC-VCO; modified anti-parallel structure; phase noise; tuning range; voltage controlled oscillators; Anodes; Cathodes; Circuit noise; Coupling circuits; Degradation; Moon; Phase noise; Q factor; Signal to noise ratio; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1436796

Filename

1436796