DocumentCode :
436002
Title :
A CMOS charge pump with a novel structure in PLL
Author :
Tao, Zhang ; Xuecheng, Zou ; Xubang, Shen
Author_Institution :
Inst. of Pattern Recognition & Artificial Intelligence, Huazhong Sci. & Technol. Univ., Wuhan, China
Volume :
2
fYear :
2004
fDate :
18-21 Oct. 2004
Firstpage :
1555
Abstract :
A novel structure for a charge pump circuit is proposed, in which the current follow technology is used to make perfect current matching characteristics, and two differential inverters are implanted to increase the speed of charge pump. Simulation results, with 1st silicon 0.25μm 2.5V CMOS mixed signal process, show the good current matching characteristics regardless of the charge pump output voltages.
Keywords :
CMOS integrated circuits; mixed analogue-digital integrated circuits; phase locked loops; 0.25 micron; 2.5 V; CMOS charge pump; CMOS mixed signal process; differential inverter; phase locked loop; CMOS technology; Charge pumps; Circuits; Clocks; Filters; Phase frequency detector; Phase locked loops; Switches; Voltage; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
Type :
conf
DOI :
10.1109/ICSICT.2004.1436914
Filename :
1436914
Link To Document :
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