• DocumentCode
    43666
  • Title

    A New High-Speed Memory Interconnect Architecture Using Microwave Interconnects and Multicarrier Signaling

  • Author

    Bensalem, Brahim ; Aberle, James T.

  • Author_Institution
    Embedded & Commun. Div., Intel Corp., Chandler, AZ, USA
  • Volume
    4
  • Issue
    2
  • fYear
    2014
  • fDate
    Feb. 2014
  • Firstpage
    332
  • Lastpage
    340
  • Abstract
    A new memory bus concept that has the potential to push double data rate (DDR) memory speed to 30 Gbit/s is presented. We propose to map the conventional DDR bus to a microwave link using a multicarrier frequency division multiplexing scheme. We call this approach multicarrier memory channel architecture (MCMCA). In MCMCA, each memory signal is modulated onto an RF carrier using 64-QAM format. The carriers are then routed using substrate integrated waveguide (SIW) interconnects. At the receiver, the memory signals are demodulated and then delivered to SDRAM devices. We present details of our proposal as well as the results of simulations and experiments, which demonstrate the merits of this approach. Experimental characterization of the new channel shows that by using judicious frequency division multiplexing, as few as one SIW is sufficient to transmit the 64 DDR bits. The overall aggregated bus data rate achieves 240 GB data transfer with the error vector magnitude not exceeding 2.26% and phase error of 1.07 degrees or less.
  • Keywords
    DRAM chips; frequency division multiplexing; integrated circuit interconnections; memory architecture; quadrature amplitude modulation; substrate integrated waveguides; 64-QAM format; DDR memory speed; MCMCA; RF carrier; SDRAM devices; SIW interconnects; bit rate 30 Gbit/s; double data rate memory speed; error vector magnitude; high speed memory interconnect architecture; memory bus concept; microwave interconnects; microwave link; multicarrier frequency division multiplexing scheme; multicarrier memory channel architecture; multicarrier signaling; storage capacity 240 Gbit; storage capacity 64 bit; substrate integrated waveguide interconnects; Bandwidth; Dispersion; Frequency division multiplexing; Frequency modulation; Integrated circuit interconnections; Memory architecture; Proposals; Double data rate memory; memory wall; signal integrity; substrate integrated waveguide;
  • fLanguage
    English
  • Journal_Title
    Components, Packaging and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    2156-3950
  • Type

    jour

  • DOI
    10.1109/TCPMT.2013.2283234
  • Filename
    6624126