Title :
Current annealing of irradiated CMOS integrated circuits
Author :
Bogatyrev, Yuri V. ; Korshunov, Fedor P.
Keywords :
Annealing; CMOS integrated circuits; Dielectrics; Electrons; Helium; Ionizing radiation; Lattices; MOS devices; Temperature; Voltage;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2003. RADECS 2003. Proceedings of the 7th European Conference on
Conference_Location :
Noordwijk, The Netherlands
Print_ISBN :
92-9092-846-8
