DocumentCode :
436729
Title :
Physical model of single heavy ION induced hard errors
Author :
Useinov, R.G. ; Zebre, G.I. ; Emelianov, V.V. ; Persbenkov, V.S. ; Ulimov, V.N.
fYear :
2003
fDate :
15-19 Sept. 2003
Firstpage :
249
Lastpage :
252
Keywords :
Circuits; Error correction; Fluctuations; Instruments; Leakage current; MOSFETs; Microelectronics; Random access memory; Statistics; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2003. RADECS 2003. Proceedings of the 7th European Conference on
Conference_Location :
Noordwijk, The Netherlands
ISSN :
0379-6566
Print_ISBN :
92-9092-846-8
Type :
conf
Filename :
1442447
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=436729
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