DocumentCode :
436740
Title :
Experimental study of single-event transient current in SOI devices
Author :
Hirao, T. ; Shibata, T. ; Laird, J.S. ; Onoda, S. ; Takabashi, Y. ; Ohnishi, K. ; Kamiya, T.
fYear :
2003
fDate :
15-19 Sept. 2003
Firstpage :
305
Lastpage :
309
Keywords :
Charge measurement; Computational modeling; Computer simulation; Current measurement; Doping; Ion beams; MOS capacitors; Oxygen; Satellites; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2003. RADECS 2003. Proceedings of the 7th European Conference on
Conference_Location :
Noordwijk, The Netherlands
ISSN :
0379-6566
Print_ISBN :
92-9092-846-8
Type :
conf
Filename :
1442461
Link To Document :
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