DocumentCode
436756
Title
Radiation-induced back channel leakage in 60 MeV-proton-irradiated 0.10 /spl mu/m-CMOS partially depleted SOI MOSFETs
Author
Rafi, J.M. ; Mercha, A. ; Simoen, E. ; Claeys, C. ; Mohammadzadeh, Ali
fYear
2003
fDate
15-19 Sept. 2003
Firstpage
425
Lastpage
432
Keywords
Degradation; Geometry; Leakage current; MOSFETs; Protons; Semiconductor films; Silicon on insulator technology; Space technology; Switches; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 2003. RADECS 2003. Proceedings of the 7th European Conference on
Conference_Location
Noordwijk, The Netherlands
ISSN
0379-6566
Print_ISBN
92-9092-846-8
Type
conf
Filename
1442497
Link To Document