DocumentCode
436757
Title
A study on radiation damage of IGBTs by 2-MeV electrons at different irradiation temperatures
Author
Nakabayashi, M. ; Ohyama, Hirofumi ; Hanano, N. ; Kamiya, T. ; Hirao, T. ; Simoen, E. ; Claeys, C.
fYear
2003
fDate
15-19 Sept. 2003
Firstpage
433
Lastpage
437
Keywords
Charge carrier lifetime; Charge carriers; Electrons; Insulated gate bipolar transistors; Insulation; Radiative recombination; Silicon; Spontaneous emission; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 2003. RADECS 2003. Proceedings of the 7th European Conference on
Conference_Location
Noordwijk, The Netherlands
ISSN
0379-6566
Print_ISBN
92-9092-846-8
Type
conf
Filename
1442498
Link To Document