DocumentCode :
436757
Title :
A study on radiation damage of IGBTs by 2-MeV electrons at different irradiation temperatures
Author :
Nakabayashi, M. ; Ohyama, Hirofumi ; Hanano, N. ; Kamiya, T. ; Hirao, T. ; Simoen, E. ; Claeys, C.
fYear :
2003
fDate :
15-19 Sept. 2003
Firstpage :
433
Lastpage :
437
Keywords :
Charge carrier lifetime; Charge carriers; Electrons; Insulated gate bipolar transistors; Insulation; Radiative recombination; Silicon; Spontaneous emission; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2003. RADECS 2003. Proceedings of the 7th European Conference on
Conference_Location :
Noordwijk, The Netherlands
ISSN :
0379-6566
Print_ISBN :
92-9092-846-8
Type :
conf
Filename :
1442498
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=436757
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