Buildup and annealing of interface traps under the influence of low-dose rate space irradiation taking into account high-frequency gate bias switches

Author

Zebrev, G.I. ; Pershenkov, V.S. ; Shvetzov-Shilovsky, I.N. ; Morozov, I.S. ; Ulimov, V.N. ; Emeliano, A.V.

fYear

2003

fDate

15-19 Sept. 2003

Firstpage

439

Lastpage

441

Keywords

Annealing; Delay; Equations; Frequency; Instruments; MOSFET circuits; Physics; Space missions; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 2003. RADECS 2003. Proceedings of the 7th European Conference on

Conference_Location

Noordwijk, The Netherlands

ISSN

0379-6566

Print_ISBN

92-9092-846-8

Type

Filename

1442500

Link To Document