• DocumentCode
    436789
  • Title

    MeV neutron-induced SEU in SRAM devices

  • Author

    Flament, O. ; Baggio, J. ; Hose, C.D. ; Gasiot, G. ; Leray, J.L.

  • fYear
    2003
  • fDate
    15-19 Sept. 2003
  • Firstpage
    649
  • Lastpage
    652
  • Keywords
    Analytical models; CMOS technology; Life estimation; Manufacturing; Neutrons; Power measurement; Power supplies; Random access memory; Single event upset; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems, 2003. RADECS 2003. Proceedings of the 7th European Conference on
  • Conference_Location
    Noordwijk, The Netherlands
  • ISSN
    0379-6566
  • Print_ISBN
    92-9092-846-8
  • Type

    conf

  • Filename
    1442565