• DocumentCode
    436801
  • Title

    Sapphire-bonded photonic crystal lasers

  • Author

    Cao, J.R. ; Wei, Zhijian ; Choi, Sangjun ; Kuang, Wan ; O´Brien, John D. ; Dapkus, P.Daniel

  • Author_Institution
    Dept. of Electr. Eng./Electrophys., Univ. of Southern California, Los Angeles, CA, USA
  • fYear
    2004
  • fDate
    31 May-4 June 2004
  • Firstpage
    94
  • Lastpage
    95
  • Abstract
    Direct wafer bonding between InGaAsP/InP and sapphire is demonstrated. CW lasing is demonstrated in two-dimensional photonic crystal microcavities formed in this material.
  • Keywords
    III-V semiconductors; arsenic compounds; gallium arsenide; gallium compounds; indium compounds; microcavity lasers; optical fabrication; photoluminescence; photonic crystals; sapphire; semiconductor lasers; wafer bonding; Al2O3; InGaAsP-InP; direct wafer bonding; sapphire-bonded photonic crystal lasers; two-dimensional photonic crystal microcavities; Gold; Laser modes; Microcavities; Optical pulses; Photonic crystals; Silicon compounds; Substrates; Temperature; Wafer bonding; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8595-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2004.1442619
  • Filename
    1442619
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=436801