Title :
Sapphire-bonded photonic crystal lasers
Author :
Cao, J.R. ; Wei, Zhijian ; Choi, Sangjun ; Kuang, Wan ; O´Brien, John D. ; Dapkus, P.Daniel
Author_Institution :
Dept. of Electr. Eng./Electrophys., Univ. of Southern California, Los Angeles, CA, USA
fDate :
31 May-4 June 2004
Abstract :
Direct wafer bonding between InGaAsP/InP and sapphire is demonstrated. CW lasing is demonstrated in two-dimensional photonic crystal microcavities formed in this material.
Keywords :
III-V semiconductors; arsenic compounds; gallium arsenide; gallium compounds; indium compounds; microcavity lasers; optical fabrication; photoluminescence; photonic crystals; sapphire; semiconductor lasers; wafer bonding; Al2O3; InGaAsP-InP; direct wafer bonding; sapphire-bonded photonic crystal lasers; two-dimensional photonic crystal microcavities; Gold; Laser modes; Microcavities; Optical pulses; Photonic crystals; Silicon compounds; Substrates; Temperature; Wafer bonding; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442619
