Yield improvement for laser grown on indium phosphide using TBP in the multiwafer planetary reactor

The improvement in wafer yield to increase the amount of usable wafer area per epitaxy run is of paramount interest. One possibility would be to change the precursors just for the active layer of the device to combine the advantages of PH₃ and TBP in one structure. As TBP is known as already totally decomposed at 600 °C as opposed to the case of PH₃ it could give a less temperature sensitive alternative to grow quaternary material for optoelectronic devices. On the other hand buffer and claddings can still be grown with the cheaper PH₃. This investigation, focuses on the wafer photoluminescence standard deviation (Std. Div) in a total of 14 laser test structure MOCVD runs. The goal is to check if there could be an advantage to using different precursors in one structure.