DocumentCode :
436807
Title :
Process optimization for dry etching of InP-InGaAsP-based photonic crystals with a Cl2/CH4/H2 mixture on an ICP-RIE
Author :
Strasser, P. ; Wuest, R. ; Robin, F. ; Erni, D. ; Jackel, H.
Author_Institution :
Electron. Lab., ETH, Zurich, Switzerland
fYear :
2004
fDate :
31 May-4 June 2004
Firstpage :
175
Lastpage :
178
Abstract :
Etching photonic crystals (PhCs) in InP/InGaAsP requires a process with high selectivity against the mask for the fabrication of about 2 μm deep holes as required for PhCs in a low refractive-index-contrast material system. We etch PhCs with a Cl2/CH4/H2 gas mixture on an ICP-RlE system. In this paper, we present our fabrication technology and discuss the influence of the mask material and layer composition on the etched hole shape.
Keywords :
III-V semiconductors; arsenic compounds; gallium arsenide; gallium compounds; indium compounds; masks; optical fabrication; optical waveguides; optimisation; photonic crystals; refractive index; sputter etching; ICP-RIE; InP-InGaAsP; dry etching; mask material; photonic crystals; refractive-index-contrast material system; Crystalline materials; Dry etching; Fabrication; Indium phosphide; Photonic crystals; Plasma applications; Shape; Silicon compounds; Slabs; Sputter etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8595-0
Type :
conf
DOI :
10.1109/ICIPRM.2004.1442639
Filename :
1442639
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=436807
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