Title :
High performance millimeter wave 0.1 μm InP HEMT MMIC LNAs fabricated on 100 mm wafers
Author :
Grundbacher, R. ; Uyeda, J. ; Lai, R. ; Umemoto, D. ; Liu, P.H. ; Barsky, M. ; Cavus, A. ; Lee, L.J. ; Chen, J. ; Gonzalez, J. ; Chen, S. ; Block, T. ; Oki, A.
Author_Institution :
Northrop Grumman Space Technol., Redondo Beach, CA, USA
fDate :
31 May-4 June 2004
Abstract :
Millimeter wave 0.1μm InP HEMT MMlCs fabricated on 100 mm InP substrates have been demonstrated at NGST. Production capability in 100 mm MBE growth, frontside processing, and backside processing has been established and is presented. MMIC performance is described for Ka-band, Q-band, and W-band low noise amplifiers and for a 0.5 to 80 GHz distributed amplifier.
Keywords :
HEMT integrated circuits; MIMIC; distributed amplifiers; high electron mobility transistors; millimetre wave amplifiers; molecular beam epitaxial growth; 0.1 mum; 0.5 to 80 GHz; InP; MBE growth; backside processing; distributed amplifier; frontside processing; millimeter wave HEMT MMIC LNA; Conductivity; Fabrication; HEMTs; Indium phosphide; MMICs; Millimeter wave technology; Molecular beam epitaxial growth; Phased arrays; Production; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442710
