DocumentCode
436808
Title
High performance millimeter wave 0.1 μm InP HEMT MMIC LNAs fabricated on 100 mm wafers
Author
Grundbacher, R. ; Uyeda, J. ; Lai, R. ; Umemoto, D. ; Liu, P.H. ; Barsky, M. ; Cavus, A. ; Lee, L.J. ; Chen, J. ; Gonzalez, J. ; Chen, S. ; Block, T. ; Oki, A.
Author_Institution
Northrop Grumman Space Technol., Redondo Beach, CA, USA
fYear
2004
fDate
31 May-4 June 2004
Firstpage
284
Lastpage
287
Abstract
Millimeter wave 0.1μm InP HEMT MMlCs fabricated on 100 mm InP substrates have been demonstrated at NGST. Production capability in 100 mm MBE growth, frontside processing, and backside processing has been established and is presented. MMIC performance is described for Ka-band, Q-band, and W-band low noise amplifiers and for a 0.5 to 80 GHz distributed amplifier.
Keywords
HEMT integrated circuits; MIMIC; distributed amplifiers; high electron mobility transistors; millimetre wave amplifiers; molecular beam epitaxial growth; 0.1 mum; 0.5 to 80 GHz; InP; MBE growth; backside processing; distributed amplifier; frontside processing; millimeter wave HEMT MMIC LNA; Conductivity; Fabrication; HEMTs; Indium phosphide; MMICs; Millimeter wave technology; Molecular beam epitaxial growth; Phased arrays; Production; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8595-0
Type
conf
DOI
10.1109/ICIPRM.2004.1442710
Filename
1442710
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