Title :
Sulfur doped indium phosphide on silicon substrate grown by epitaxial lateral overgrowth
Author :
Sun, Y.T. ; Lourdudoss, Sebastian
Author_Institution :
Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden
fDate :
31 May-4 June 2004
Abstract :
The epitaxial lateral overgrowth (ELOG) of sulfur doped InP from ring shaped openings on SiNx masked InP/Si substrate in low pressure hydride vapor phase epitaxy system was investigated. Octahedral shaped ELOG InP templates with smooth surface were formed and studied by cathodoluminescence (CL). High energy transition at 825 nm (1.52 eV) due to the band filling effect caused by high concentration sulfur atoms trapped in threading dislocations was observed in spectra at 80 K. The band edge transition at 875 nm (1.42 eV) in CL spectra has no red shift caused by thermal strain. As observed in panchromatic image, defect free area was surrounded by high density threading dislocations that were pined by sulfur atoms due to impurity hardening. The quality of the ELOG InP templates is promising for the integration of photonic active layer on Si substrate.
Keywords :
III-V semiconductors; cathodoluminescence; dislocations; impurity absorption spectra; indium compounds; semiconductor epitaxial layers; semiconductor growth; sulphur; vapour phase epitaxial growth; 1.42 eV; 1.52 eV; 80 K; 825 nm; 875 nm; InP-Si; InP:S; SiNx; band edge transition; band filling effect; cathodoluminescence; energy transition; epitaxial lateral overgrowth; impurity hardening; pressure hydride vapor phase epitaxy; red shift; silicon substrate; sulfur atoms; sulfur doped indium phosphide; thermal strain; threading dislocations; Epitaxial growth; Epitaxial layers; Etching; Impurities; Indium phosphide; Scanning electron microscopy; Silicon; Substrates; Surface morphology; Thermal expansion;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442723
