DocumentCode :
436811
Title :
Multiwafer solid source phosphorus MBE on InP for DHBTs and aluminum free lasers
Author :
Aidam, R. ; Losch, R. ; Walther, M. ; Driad, R. ; Kallenbach, S.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
fYear :
2004
fDate :
31 May-4 June 2004
Firstpage :
342
Lastpage :
345
Abstract :
InP-based double heterojunction bipolar transistors (DHBTs) and aluminum free 14xx nm high power lasers were grown in a multiwafer solid source phosphorus molecular beam epitaxy system. The growth of InP, carbon-doped InGaAs, and quaternary InGaAsP was studied in detail. DHBTs display a common emitter current gain β of 65. Cutoff frequencies values of more than 200 GHz for both ft and fmax have been achieved. Tapered diode lasers reach continuous wave output power levels of 1.5 W at room temperature.
Keywords :
III-V semiconductors; arsenic compounds; carbon; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor lasers; 1.5 W; DHBT; InGaAs:C; InGaAsP; InP; aluminum free lasers; carbon; double heterojunction bipolar transistors; emitter current gain; multiwafer solid source phosphorus MBE; tapered diode lasers; Aluminum; Cutoff frequency; Displays; Double heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Laser beam cutting; Molecular beam epitaxial growth; Power lasers; Solid lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8595-0
Type :
conf
DOI :
10.1109/ICIPRM.2004.1442725
Filename :
1442725
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=436811
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