Multiwafer solid source phosphorus MBE on InP for DHBTs and aluminum free lasers

Author

Aidam, R. ; Losch, R. ; Walther, M. ; Driad, R. ; Kallenbach, S.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany

fYear

2004

fDate

31 May-4 June 2004

Firstpage

342

Lastpage

345

Abstract

InP-based double heterojunction bipolar transistors (DHBTs) and aluminum free 14xx nm high power lasers were grown in a multiwafer solid source phosphorus molecular beam epitaxy system. The growth of InP, carbon-doped InGaAs, and quaternary InGaAsP was studied in detail. DHBTs display a common emitter current gain β of 65. Cutoff frequencies values of more than 200 GHz for both f_t and f_max have been achieved. Tapered diode lasers reach continuous wave output power levels of 1.5 W at room temperature.

Keywords

III-V semiconductors; arsenic compounds; carbon; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor lasers; 1.5 W; DHBT; InGaAs:C; InGaAsP; InP; aluminum free lasers; carbon; double heterojunction bipolar transistors; emitter current gain; multiwafer solid source phosphorus MBE; tapered diode lasers; Aluminum; Cutoff frequency; Displays; Double heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Laser beam cutting; Molecular beam epitaxial growth; Power lasers; Solid lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442725

Filename

1442725