Tradeoff of DC/RF performance versus reliability in 0.1 μm InP HEMTs

The tradeoff of DC/RF performance versus reliability has been explored on 0.1 μm InP HEMTs. The tradeoff between performance and reliability shows the dependence on the process techniques. While higher performance could be achieved with certain process techniques, the reliability performance is adversely affected. Nevertheless, all the process variations explored here exhibit activation energy of approximately 1.9 eV. However, the time-to-failure (TTF) at lifetest temperatures of 230°C and 250°C and median-time-to-failure (MTTF) at junction temperature of 125°C depend on the process techniques. The results are beneficial for balancing performance versus reliability through the adjustment of the processing technique.