In-situ cleaned high-quality InGaAlAs-InGaAsP butt-joint grown by metal-organic vapor phase epitaxy

Author

Kitatani, T. ; Shinoda, K. ; Tsuchiya, T. ; Sato, H. ; Ouchi, K. ; Uchiyama, H. ; Tsuji, S. ; Aoki, M.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

2004

fDate

31 May-4 June 2004

Firstpage

480

Lastpage

483

Abstract

High-quality butt-joint-based hetero-integration of InGaAlAs and InGaAsP was successfully demonstrated. A new in-situ cleaning process in an MOVPE reactor effectively removed aluminum oxides on the regrown interface, so a flat lateral butt-jointed hetero-interface was obtained. The losing characteristic of novel multiple butt-jointed lasers formed by this process showed high optical-coupling efficiency of approximately 98%, which is comparable to that of a conventional InGaAsP-InGaAsP BJ.

Keywords

MOCVD; aluminium compounds; arsenic compounds; cleaning; gallium arsenide; gallium compounds; indium compounds; optical couplers; optical materials; optical waveguides; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; InGaAlAs-InGaAsP; MOVPE reactor; aluminum oxides; butt-joint-based heterointegration; in-situ cleaning process; metal-organic vapor phase epitaxy; multiple butt-jointed lasers; optical-coupling efficiency; Aluminum oxide; Cleaning; Epitaxial growth; Epitaxial layers; Etching; Inductors; Optical waveguides; Quantum well devices; Quantum well lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442762

Filename

1442762