Title :
In-situ cleaned high-quality InGaAlAs-InGaAsP butt-joint grown by metal-organic vapor phase epitaxy
Author :
Kitatani, T. ; Shinoda, K. ; Tsuchiya, T. ; Sato, H. ; Ouchi, K. ; Uchiyama, H. ; Tsuji, S. ; Aoki, M.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fDate :
31 May-4 June 2004
Abstract :
High-quality butt-joint-based hetero-integration of InGaAlAs and InGaAsP was successfully demonstrated. A new in-situ cleaning process in an MOVPE reactor effectively removed aluminum oxides on the regrown interface, so a flat lateral butt-jointed hetero-interface was obtained. The losing characteristic of novel multiple butt-jointed lasers formed by this process showed high optical-coupling efficiency of approximately 98%, which is comparable to that of a conventional InGaAsP-InGaAsP BJ.
Keywords :
MOCVD; aluminium compounds; arsenic compounds; cleaning; gallium arsenide; gallium compounds; indium compounds; optical couplers; optical materials; optical waveguides; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; InGaAlAs-InGaAsP; MOVPE reactor; aluminum oxides; butt-joint-based heterointegration; in-situ cleaning process; metal-organic vapor phase epitaxy; multiple butt-jointed lasers; optical-coupling efficiency; Aluminum oxide; Cleaning; Epitaxial growth; Epitaxial layers; Etching; Inductors; Optical waveguides; Quantum well devices; Quantum well lasers; Waveguide lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442762
