RF performance and process development of InP DHBTs using non-selective emitter regrowth

Author

Scott, D. ; Wei, Yun ; Urteaga, Miguel ; Rodwell, Mark J.W.

Author_Institution

Dept. of Electr. & Comput. Eng.,, California Univ., Santa Cruz, CA, USA

fYear

2004

fDate

31 May-4 June 2004

Firstpage

768

Lastpage

771

Abstract

We report improvements in the growth and fabrication process of InP-based double heterojunction bipolar transistors (DHBTs) utilizing non-selective molecular beam epitaxy (MBE) regrown base-emitter junctions. This regrown emitter process produces a heterojunction bipolar transistor (HBT) structure with an emitter contact area much larger than the base-emitter junction, facilitating low emitter resistance even as deep submicron base-emitter junctions are used. In this report we present process development and regrowth surface preparation details relevant to emitter regrowth. improvements to the regrowth surface and its effect on large-area dc characteristics and small-area RF device results are presented.

Keywords

III-V semiconductors; electric resistance; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; DHBT; InP; MBE; base-emitter junction; double heterojunction bipolar transistors; emitter contact; emitter resistance; nonselective emitter regrowth; regrowth surface preparation; selective molecular beam epitaxy; Contact resistance; Double heterojunction bipolar transistors; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Indium phosphide; Molecular beam epitaxial growth; Radio frequency; Silicon germanium; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442839

Filename

1442839