DocumentCode
437129
Title
Novel 600 V GaN Schottky diode delivering SiC performance at Si prices
Author
Cohen, Isaac ; Zhu, Ting Gang ; Liu, Linlin ; Murphy, Michael ; Pophristic, Milan ; Pabisz, Marek ; Gottfried, M. ; Shelton, Bryan S. ; Peres, Boris ; Ceruzzi, Alex ; Stall, Rick A.
Author_Institution
Lambda, NY
Volume
1
fYear
2005
fDate
6-10 March 2005
Firstpage
311
Abstract
GaN Schottky diodes offer the same performance benefits as SiC-based devices at a significantly lower cost. A 600 V GaN-based Schottky diode was substituted in a power conversion circuit to reduce its size and complexity. The resulting circuit had a higher efficiency and lower operating temperature than a Si-based configuration
Keywords
III-V semiconductors; Schottky diodes; gallium compounds; power convertors; silicon compounds; wide band gap semiconductors; 600 V; GaN; GaN Schottky diode; complexity reduction; power conversion circuit; size reduction; Circuit testing; Costs; Gallium nitride; Leakage current; Power conversion; Power supplies; Schottky diodes; Silicon carbide; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 2005. APEC 2005. Twentieth Annual IEEE
Conference_Location
Austin, TX
Print_ISBN
0-7803-8975-1
Type
conf
DOI
10.1109/APEC.2005.1452943
Filename
1452943
Link To Document