Title :
Novel 600 V GaN Schottky diode delivering SiC performance at Si prices
Author :
Cohen, Isaac ; Zhu, Ting Gang ; Liu, Linlin ; Murphy, Michael ; Pophristic, Milan ; Pabisz, Marek ; Gottfried, M. ; Shelton, Bryan S. ; Peres, Boris ; Ceruzzi, Alex ; Stall, Rick A.
Author_Institution :
Lambda, NY
Abstract :
GaN Schottky diodes offer the same performance benefits as SiC-based devices at a significantly lower cost. A 600 V GaN-based Schottky diode was substituted in a power conversion circuit to reduce its size and complexity. The resulting circuit had a higher efficiency and lower operating temperature than a Si-based configuration
Keywords :
III-V semiconductors; Schottky diodes; gallium compounds; power convertors; silicon compounds; wide band gap semiconductors; 600 V; GaN; GaN Schottky diode; complexity reduction; power conversion circuit; size reduction; Circuit testing; Costs; Gallium nitride; Leakage current; Power conversion; Power supplies; Schottky diodes; Silicon carbide; Temperature; Voltage;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2005. APEC 2005. Twentieth Annual IEEE
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-8975-1
DOI :
10.1109/APEC.2005.1452943
