Development of a scalable power semiconductor switch (SPSS)

High voltage IGBTs have limited switching capabilities with maximum switching frequency lower than 2 kHz, primarily due to their high switching losses. Similar situation is true for other high voltage silicon bipolar power switches. On the other hand, lower voltage IGBTs can operate at much higher switching frequencies. However, these IGBT´S voltage rating does not match the need for many high voltage applications. This paper discusses the design and development of a 4800 V, 300 A, 10 kHz scalable power semiconductor switch (SPSS) based on series connecting IGBTs. The static and dynamic voltage balance between IGBTs are achieved using active clamp circuit and active gate control. The developed SPSS derives its control power directly from the main power bus. From a user´s standpoint, the SPSS is a three terminal optically controlled high-power switch.