Title :
Highly controllable electrochemical deep etching process on silicon
Author :
Chen, Yu ; Wang, Lianwei ; Sarro, P.M.
Author_Institution :
Dept. of Electron. Eng. & Nano-tech Center, East China Normal Univ., Shanghai, China
fDate :
30 Jan.-3 Feb. 2005
Abstract :
Electrochemical etching processes due to their low cost and high aspect ratio achievable are a very attractive alternative for deep etching of silicon. In this paper, a highly controllable process with more tolerance for structure design is investigated. Various distributions of design patterns, as well as different experimental conditions, such as light illumination, current modulation and experimental temperature are investigated. An electrochemical etching process in the presence of a magnetic field is also evaluated as a possibility to constrain the boundary effect.
Keywords :
elemental semiconductors; etching; magnetic field effects; micromachining; micromechanical devices; silicon; Si; boundary effect; current modulation; design pattern distribution; different experimental conditions; electrochemical deep etching; experimental temperature; light illumination; magnetic field; structure design; Fabrication; Lighting; Micromechanical devices; Optical modulation; Plasma temperature; Process control; Silicon; Temperature distribution; Thyristors; Wet etching;
Conference_Titel :
Micro Electro Mechanical Systems, 2005. MEMS 2005. 18th IEEE International Conference on
Print_ISBN :
0-7803-8732-5
DOI :
10.1109/MEMSYS.2005.1453979
