Gate bias dependent evolution due to two unintentionally formed quantum dot in a silicon-on-insulator nano-wire transistor
Author :
Cho, K.H. ; Son, S.H. ; Kim, H.K. ; Jung, Y.C. ; Naser, B. ; Lin, J.-F. ; Hwang, S.W. ; Ahn, D. ; Bird, J.P. ; Park, B.G.
fYear :
2004
fDate :
Oct. 27-29, 2004
Firstpage :
158
Lastpage :
159
Keywords :
Capacitance; Electrons; Etching; Fabrication; Quantum computing; Quantum dots; Silicon on insulator technology; Temperature; Transistors; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2004. Digest of Papers. 2004 International
