DocumentCode
437330
Title
Gate bias dependent evolution due to two unintentionally formed quantum dot in a silicon-on-insulator nano-wire transistor
Author
Cho, K.H. ; Son, S.H. ; Kim, H.K. ; Jung, Y.C. ; Naser, B. ; Lin, J.-F. ; Hwang, S.W. ; Ahn, D. ; Bird, J.P. ; Park, B.G.
fYear
2004
fDate
Oct. 27-29, 2004
Firstpage
158
Lastpage
159
Keywords
Capacitance; Electrons; Etching; Fabrication; Quantum computing; Quantum dots; Silicon on insulator technology; Temperature; Transistors; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2004. Digest of Papers. 2004 International
Print_ISBN
4-99024720-5
Type
conf
DOI
10.1109/IMNC.2004.245772
Filename
1459522
Link To Document