DocumentCode :
437344
Title :
10-nm scale pattern formation using calix[41arene EB resist for CMOS gate etching
Author :
Narihiro, Mitsuru ; Arai, Kenta ; Ishida, Makoto ; Ochiai, Yukinori ; Natsuka, Yasutaka
fYear :
2004
fDate :
Oct. 27-29, 2004
Firstpage :
340
Lastpage :
341
Keywords :
Ambient intelligence; Anti-freeze; Dry etching; Ethanol; Laboratories; National electric code; Pattern formation; Research and development; Resists; Surface tension;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2004. Digest of Papers. 2004 International
Print_ISBN :
4-99024720-5
Type :
conf
DOI :
10.1109/IMNC.2004.245635
Filename :
1459617
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=437344
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