Title :
TID test for SDRAM based IEEM calibration system
Author :
Bertazzoni, Stefano ; Di Giovenale, Domenico ; Salmeri, Marcello ; Mongiardo, Lorenzo ; Florean, Marco ; Salsano, Adelio ; Wyss, Jeffery ; Rando, Riccardo
Author_Institution :
Dept. of Electron. Eng., Rome Univ., Italy
Abstract :
Traditionally, to map out device sensitivity with submicrometric resolutions one uses a microbeam. Ion electron emission microscopy (IEEM) appears to be a promising new method for device characterization. An advanced implementation of this instrument is under development at the SIRAD irradiation facility of the Legnaro National Laboratory (LNL). In IEEM operations total integrated dose (TID) effects could be a potential problem and should be addressed before the final test. For this purpose a TID monitoring method, based on the measurement of the bit retention time, that is the time the information is retained in a memory cell without refresh, in synchronous dynamic RAM (SDRAM) commercial off the shelf (COTS) devices, is proposed. This paper presents the experimental setup and the results of a preliminary TID test with a 60Co gamma ray source on SDRAM COTS to test the method.
Keywords :
DRAM chips; electron microscopy; gamma-ray effects; ion microscopy; radiation monitoring; 60Co gamma ray source; SDRAM based IEEM calibration system; bit retention time; device characterization; device sensitivity; ion electron emission microscopy; memory cell; microbeam; submicrometric resolutions; synchronous dynamic RAM commercial off the shelf devices; total integrated dose effects; total integrated dose monitoring method; Calibration; Electron emission; Electron microscopy; Instruments; Laboratories; Monitoring; Random access memory; SDRAM; System testing; Time measurement;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2004 IEEE
Print_ISBN :
0-7803-8700-7
Electronic_ISBN :
1082-3654
DOI :
10.1109/NSSMIC.2004.1462319
