• DocumentCode
    437890
  • Title

    Design and characterization of active pixel sensors in 0.25 CMOS

  • Author

    Velthuis, J.J. ; Allport, P.P. ; Casse, G. ; Evans, A. ; Turchetta, R. ; Villani, G.

  • Author_Institution
    Liverpool Univ., UK
  • Volume
    2
  • fYear
    2004
  • fDate
    16-22 Oct. 2004
  • Firstpage
    1091
  • Abstract
    We are developing CMOS monolithic active pixel sensors for high energy physics applications. We have successfully produced 3 test structures. They feature several different pixel types including: standard 3MOS, 4MOS allowing Correlated Double Sampling (CDS), charge amplifier pixels and a Flexible APS (FAPS). The FAPS has a 10 deep pipeline on each pixel. This is specifically designed with the beam structure of the TESLA proposal for the linear collider in mind. A program to test these devices is well under way. Here results demonstrate that these devices are still operating well after a dose of 1014 p/cm2 will be reported. Furthermore, the response of the FAPS to minimum ionizing particles (MIPs) from a 106Ru β-source are presented. The obtained S/N-ratio for the 10 cells of the FAPS varies between (14.7±0.4) and (17.0±0.3).
  • Keywords
    CMOS integrated circuits; ion beam effects; position sensitive particle detectors; semiconductor counters; semiconductor device noise; 3MOS; 4MOS; 106Ru beta-source; CMOS monolithic active pixel sensors; TESLA proposal; beam structure; charge amplifier pixels; correlated double sampling; high energy physics applications; linear collider; minimum ionizing particles; signal-noise ratio;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record, 2004 IEEE
  • ISSN
    1082-3654
  • Print_ISBN
    0-7803-8700-7
  • Electronic_ISBN
    1082-3654
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2004.1462393
  • Filename
    1462393