DocumentCode :
437890
Title :
Design and characterization of active pixel sensors in 0.25 CMOS
Author :
Velthuis, J.J. ; Allport, P.P. ; Casse, G. ; Evans, A. ; Turchetta, R. ; Villani, G.
Author_Institution :
Liverpool Univ., UK
Volume :
2
fYear :
2004
fDate :
16-22 Oct. 2004
Firstpage :
1091
Abstract :
We are developing CMOS monolithic active pixel sensors for high energy physics applications. We have successfully produced 3 test structures. They feature several different pixel types including: standard 3MOS, 4MOS allowing Correlated Double Sampling (CDS), charge amplifier pixels and a Flexible APS (FAPS). The FAPS has a 10 deep pipeline on each pixel. This is specifically designed with the beam structure of the TESLA proposal for the linear collider in mind. A program to test these devices is well under way. Here results demonstrate that these devices are still operating well after a dose of 1014 p/cm2 will be reported. Furthermore, the response of the FAPS to minimum ionizing particles (MIPs) from a 106Ru β-source are presented. The obtained S/N-ratio for the 10 cells of the FAPS varies between (14.7±0.4) and (17.0±0.3).
Keywords :
CMOS integrated circuits; ion beam effects; position sensitive particle detectors; semiconductor counters; semiconductor device noise; 3MOS; 4MOS; 106Ru beta-source; CMOS monolithic active pixel sensors; TESLA proposal; beam structure; charge amplifier pixels; correlated double sampling; high energy physics applications; linear collider; minimum ionizing particles; signal-noise ratio;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2004 IEEE
ISSN :
1082-3654
Print_ISBN :
0-7803-8700-7
Electronic_ISBN :
1082-3654
Type :
conf
DOI :
10.1109/NSSMIC.2004.1462393
Filename :
1462393
Link To Document :
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