Design and characterization of a novel, radiation-resistant active pixel sensor in a standard 0.25 μm CMOS technology

CMOS monolithic active pixel sensors are currently developed for particle physics vertex detectors. Their radiation resistance has already been proved to be high enough for the devices to be used at machines like the linear collider, where the radiation fluence is expected to be of the order of 10¹² proton/cm². However, in order to address more radiation-harsh environments, we proposed a novel sensor structure based on the deep N-well, which is found in triple-well CMOS technologies. Potential benefits arising from this technology are investigated and simulation results for standard and novel structure compared.