Meyer–Neldel Rule for Effective Channel Mobility in the Subthreshold Region of Poly-Si Thin-Film Transistors

Author

Xiaoliang Zhou ; Mingxiang Wang

Author_Institution

Dept. of Microelectron., Soochow Univ., Suzhou, China

Volume

34

Issue

5

fYear

2013

fDate

May-13

Firstpage

644

Lastpage

646

Abstract

It is verified that the entire subthreshold region of poly-Si thin film transistors (TFTs) is a pseudo-subthreshold region dominated by drift current, where the carrier effective channel mobility is found to follow the Meyer-Neldel rule (MNR). Characteristic MN energies extracted from both metal-induced laterally crystallized poly-Si TFTs and excimer laser annealed TFTs are all close to the optical phonon energy of Si, providing strong evidence to the MNR. Carrier thermionic emission over grain boundary barriers activated by multiphonon absorption process is the origin of the MNR.

Keywords

carrier mobility; elemental semiconductors; semiconductor device models; silicon; thermionic emission; thin film transistors; Meyer-Neldel rule; Si; carrier effective channel mobility; carrier thermionic emission; drift current; grain boundary barrier; multiphonon absorption process; polysilicon thin film transistors; pseudosubthreshold region; Effective channel mobility; Meyer–Neldel rule (MNR); pseudo-subthreshold region; thin film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2251601

Filename

6490008