• DocumentCode
    438234
  • Title

    A novel type of spin injection barrier in a GaAs based two-dimensional electron gas system

  • Author

    Koo, H.C. ; Yi, Hyunjung ; Song, J.D. ; Chang, J.Y. ; Han, S.H.

  • Author_Institution
    Nano Device Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea
  • fYear
    2005
  • fDate
    4-8 April 2005
  • Firstpage
    617
  • Lastpage
    618
  • Abstract
    A new forming spin injection barrier method on the GaAs-based two-dimensional electron gas (2-DEG) system was utilized using CoFe as the ferromagnetic electrodes. It was shown that the novel method of oxidation process enables to easily control the oxide thickness by the amount of growing AlAs layer and obtain a pin-hole free quality.
  • Keywords
    III-V semiconductors; aluminium compounds; cobalt alloys; ferromagnetic materials; gallium arsenide; iron alloys; oxidation; spin polarised transport; two-dimensional electron gas; 2DEG; CoFe-AlAs-AlOx-AlGaAs-GaAs; GaAs; GaAs-based two-dimensional electron gas; ferromagnetic electrodes; oxidation; oxide thickness; pin-hole free quality; spin injection barrier; two dimensional electron gas system; Electrodes; Electrons; Gallium arsenide; Insulation; Oxidation; Schottky barriers; Semiconductor devices; Spin polarized transport; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
  • Print_ISBN
    0-7803-9009-1
  • Type

    conf

  • DOI
    10.1109/INTMAG.2005.1463737
  • Filename
    1463737
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=438234