Title :
A novel type of spin injection barrier in a GaAs based two-dimensional electron gas system
Author :
Koo, H.C. ; Yi, Hyunjung ; Song, J.D. ; Chang, J.Y. ; Han, S.H.
Author_Institution :
Nano Device Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea
Abstract :
A new forming spin injection barrier method on the GaAs-based two-dimensional electron gas (2-DEG) system was utilized using CoFe as the ferromagnetic electrodes. It was shown that the novel method of oxidation process enables to easily control the oxide thickness by the amount of growing AlAs layer and obtain a pin-hole free quality.
Keywords :
III-V semiconductors; aluminium compounds; cobalt alloys; ferromagnetic materials; gallium arsenide; iron alloys; oxidation; spin polarised transport; two-dimensional electron gas; 2DEG; CoFe-AlAs-AlOx-AlGaAs-GaAs; GaAs; GaAs-based two-dimensional electron gas; ferromagnetic electrodes; oxidation; oxide thickness; pin-hole free quality; spin injection barrier; two dimensional electron gas system; Electrodes; Electrons; Gallium arsenide; Insulation; Oxidation; Schottky barriers; Semiconductor devices; Spin polarized transport; Tunneling; Voltage;
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
DOI :
10.1109/INTMAG.2005.1463737
