Effective bit addressing times for precessional magnetization reversal in a magnetic memory cell

Author

Schumacher, H.W. ; Chappert, C. ; Sousa, R.C. ; Freitas, P.P.

Author_Institution

Phys. Tech. Bundesanstalt, Braunschweig, Germany

fYear

2005

fDate

4-8 April 2005

Firstpage

841

Lastpage

842

Abstract

The effective bit addressing times for precessional magnetization reversal in magnetic random access memory cells is studied. Different addressing times τ_S for switching and τ_NS for non-switching are studied using a magneto transport setup. The ultra fast magnetisation dynamics of the free layer is accessed by reading out the tunnelling magneto resistance (TMR) response of the cell using a fast sampling oscilloscope. From the measured TMR, the time evolution of the easy axis magnetization component m_x of the free layer is derived. Bit addressed switching of the free layer is studied by application of a fast perpendicular field pulse in combination with an easy axis bias field.

Keywords

magnetic storage; magnetic switching; magnetisation reversal; random-access storage; tunnelling magnetoresistance; bit addressing times; easy axis magnetization; fast sampling oscilloscope; free layer; magnetic memory cell; magneto transport setup; precessional magnetization reversal; tunnelling magnetoresistance; ultra fast magnetisation dynamics; Electrical resistance measurement; Magnetic field measurement; Magnetic memory; Magnetic switching; Magnetization reversal; Oscilloscopes; Random access memory; Sampling methods; Time measurement; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Print_ISBN

0-7803-9009-1

Type

conf

DOI

10.1109/INTMAG.2005.1463849

Filename

1463849