DocumentCode :
438281
Title :
The optimum magneto-current of collector in a silicon base spin valve transistor
Author :
Hsieh, L.C. ; Huang, Y.W. ; Lo, C.K. ; Yao, Y.D. ; Huang, D.R.
Author_Institution :
Lab. for Spintronics, Ind. Technol. Res. Inst., Taiwan
fYear :
2005
fDate :
4-8 April 2005
Firstpage :
1207
Lastpage :
1208
Abstract :
New samples of a new type of spin transistor consisting of a metallic pseudo spin-valve emitter, a copper base, and a Si (100) p-n junction collector were made. For better operating conditions, the magneto-resistance between the emitter and base (MREB) had different ratios. The value of MREB is an important factor for better magneto-current (MC) ratios; however, the working range for the emitter bias, VE, is largely improved and the maximum of MC could be enhanced by one order of the magnitude of MREB.
Keywords :
elemental semiconductors; magnetoresistance; p-n junctions; silicon; spin valves; transistors; Cu-Si; Si (100) p-n junction collector; collector; copper base; emitter bias; magneto-resistance; metallic pseudo spin-valve emitter; optimum magneto-current; silicon base spin valve transistor; Circuits; Copper; Materials science and technology; P-n junctions; Physics; Q measurement; Resistors; Roentgenium; Silicon; Spin valves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
Type :
conf
DOI :
10.1109/INTMAG.2005.1464033
Filename :
1464033
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=438281
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