• DocumentCode
    438281
  • Title

    The optimum magneto-current of collector in a silicon base spin valve transistor

  • Author

    Hsieh, L.C. ; Huang, Y.W. ; Lo, C.K. ; Yao, Y.D. ; Huang, D.R.

  • Author_Institution
    Lab. for Spintronics, Ind. Technol. Res. Inst., Taiwan
  • fYear
    2005
  • fDate
    4-8 April 2005
  • Firstpage
    1207
  • Lastpage
    1208
  • Abstract
    New samples of a new type of spin transistor consisting of a metallic pseudo spin-valve emitter, a copper base, and a Si (100) p-n junction collector were made. For better operating conditions, the magneto-resistance between the emitter and base (MREB) had different ratios. The value of MREB is an important factor for better magneto-current (MC) ratios; however, the working range for the emitter bias, VE, is largely improved and the maximum of MC could be enhanced by one order of the magnitude of MREB.
  • Keywords
    elemental semiconductors; magnetoresistance; p-n junctions; silicon; spin valves; transistors; Cu-Si; Si (100) p-n junction collector; collector; copper base; emitter bias; magneto-resistance; metallic pseudo spin-valve emitter; optimum magneto-current; silicon base spin valve transistor; Circuits; Copper; Materials science and technology; P-n junctions; Physics; Q measurement; Resistors; Roentgenium; Silicon; Spin valves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
  • Print_ISBN
    0-7803-9009-1
  • Type

    conf

  • DOI
    10.1109/INTMAG.2005.1464033
  • Filename
    1464033
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=438281