DocumentCode
438362
Title
Large magnetoresistance ratio and low resistance-area product in magnetic tunnel junction with AlHfOx barrier
Author
Noma, Kenji ; Komagaki, Koujiro ; Yamada, Kouji ; Kanai, Hitoshi ; Uehara, Yuji
Author_Institution
Adv. Head Technol. Dev. Dept., Fujitsu Ltd., Nagano, Japan
fYear
2005
fDate
4-8 April 2005
Firstpage
1991
Lastpage
1992
Abstract
The TMR films used has a structure of Ta/NiFe/PdPtMn/CoFe/Ru/CoFe/Al(-Hf)/oxidation/CoFe/NiFe/Ta fabricated using sputtering deposition. Oxidized AlHf alloys were used for a tunnel barrier of the TMR film. Larger MR-ratio and a lower resistance-area product were achieved at the optimized AlHf composition caused by the suppression of the growth of fcc-Al crystallites and by the promotion of a uniform oxidation with AlHf layer. The thickness, composition and crystallographic characteristics of AlHf layer were determined by the measurements of X-ray fluorescence (XRF) and X-ray diffractometer (XRD).
Keywords
X-ray diffraction; X-ray fluorescence analysis; aluminium alloys; cobalt alloys; crystallites; fluorescence; hafnium alloys; iron alloys; magnetic thin films; manganese alloys; nickel alloys; oxidation; palladium alloys; platinum alloys; ruthenium; sputter deposition; tantalum; tunnelling magnetoresistance; TMR films; Ta-NiFe-PdPtMn-CoFe-Ru-CoFe-AlHfOx-CoFe-NiFe-Ta; X-ray diffractometer; X-ray fluorescence; XRD; crystallites; crystallographic characteristics; magnetic tunnel junction; oxidation; resistance-area product; sputtering deposition; tunnel barrier; Crystallization; Crystallography; Electrical resistance measurement; Fluorescence; Magnetic films; Magnetic tunneling; Oxidation; Sputtering; Thickness measurement; Tunneling magnetoresistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN
0-7803-9009-1
Type
conf
DOI
10.1109/INTMAG.2005.1464434
Filename
1464434
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