Title :
Three-Dimensional Chips Can Be Cool: Thermal Study of VeSFET-Based 3-D Chips
Author :
Xiang Qiu ; Marek-Sadowska, Malgorzata ; Maly, Wojciech P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California at Santa Barbara, Santa Barbara, CA, USA
Abstract :
Thermal management becomes a huge challenge for modern IC designers, especially when chips go 3-D. Vertical slit field-effect transistor (VeSFET) technology provides an alternative thermal-friendly design choice. VeSFET-based chips not only have a much lower power density but also a better vertical thermal conductivity than their CMOS counterparts. For a VeSFET chip with ten stacked dies, the temperature increase is only 30% of that for CMOS-based chip. Assuming the same scaling trend for CMOS and VeSFET, VeSFET 3-D chips can postpone the appearance of dark silicon by three technology nodes compared with CMOS implementations. For VeSFET-based designs, different topologies of transistor arrays may result in different thermal behaviors. We perform thermal characterization of two-transistor array topologies.
Keywords :
CMOS integrated circuits; field effect transistors; thermal conductivity; CMOS-based chip; VeSFET-based 3D chips; alternative thermal-friendly design choice; dark silicon; modern IC designers; technology nodes; thermal behaviors; thermal management; three-dimensional chips; two-transistor array topologies; vertical slit field-effect transistor technology; vertical thermal conductivity; Bonding; CMOS integrated circuits; Conductivity; Heating; Silicon; Thermal conductivity; Transistors; 3-D; CMOS; canvas; thermal; vertical slit field-effect transistor (VeSFET); vertical slit field-effect transistor (VeSFET).;
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
DOI :
10.1109/TVLSI.2014.2325551