Towards automatic parameter extraction for surface-potential-based MOSFET models with the genetic algorithm

In this paper, we present an automatic parameter extraction method with the GA (genetic algorithm) for surface-potential-based MOSFET models such as HiSIM (Hiroshima-university STARC IGFET Model). The method employs a two-stage extraction procedure operating on different sets of model parameters. Experimental results demonstrate that extraction of 34 parameters can be completed within 23 hours with PC (AthlonXP 2500), although this would typically take a human expert several days.