Achieving continuous VT performance in a dual VT process

In this paper, we present a novel approach to obtain any desired intermediate threshold voltage in a dual V_T process. The intermediate threshold voltages are achieved by combining low and high threshold voltages in a device. We show that this combination can be easily implemented in layouts with negligible design and manufacturing overhead. Our results show that power-delay characteristics of the achieved intermediate thresholds match well with the ideal (but impractical) scenario that assumes that all intermediate thresholds are available in the technology.