DocumentCode
43914
Title
Intersubband Transition in Asymmetric Quantum Well Infrared Photodetector
Author
Khan, Muhammad Asad ; Pavel, A.A. ; Islam, Nahina
Author_Institution
Univ. of Missouri-Columbia, Columbia, MO, USA
Volume
12
Issue
4
fYear
2013
fDate
Jul-13
Firstpage
521
Lastpage
523
Abstract
Intersubband transition in perfect rectangular quantum well is known to be limited by “selection rule” that results from certain symmetries of wavefunctions. This letter presents Green´s function-based analysis that incorporates energy state broadening due to optical absorption and shows how stepped quantum well can introduce required “asymmetry” to defy the selection rule by breaking the bound state wavefunction symmetry and thus improve the overall optical absorption. Calculation for AlxGa1-xAs/GaAs/InyGa1-yAs stepped quantum well confirms that coupling among certain energy states increases with asymmetry and, as a result, so does the magnitude of optical absorption. The simulation approach presented is simple, physically intuitive, and extendable to any arbitrary shaped asymmetric quantum well.
Keywords
Green´s function methods; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared detectors; infrared spectra; photodetectors; semiconductor quantum wells; spectral line broadening; wave functions; AlxGa1-xAs-GaAs-InyGa1-yAs; Green function-based analysis; arbitrary shaped asymmetric quantum well; asymmetric quantum well infrared photodetector; bound state wavefunction symmetry; energy state broadening; intersubband transition; optical absorption; rectangular quantum well; stepped quantum well; Absorption; broadening; intersubband transition; quantum well photodetector; wavefunction symmetry;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2013.2260556
Filename
6512057
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