DocumentCode
439156
Title
Advances in BJT techniques for high-performance transceivers
Author
Gilbert, Barrie
Author_Institution
Analog Devices Inc., Beaverton, OR
fYear
1997
fDate
16-18 Sept. 1997
Firstpage
31
Lastpage
38
Abstract
New low-inertia bipolar junction transistor (BJT) technologies have paved the way for many novel cell designs during the past few years. These IC processes are optimized for operation at low supply voltages and support the high-performance passive components (such as inductors, low-capacitance thin-film resistors and low-resistance metal-oxide-metal capacitors) needed to realize integrated transceivers. This paper presents several circuit concepts, of general value, which have proven useful in the realization of high-performance cellular and cordless telephony applications.
Keywords
CMOS process; CMOS technology; Capacitance; Dielectric substrates; Isolation technology; Resistors; Telephony; Thin film circuits; Thin film inductors; Transceivers;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1997. ESSCIRC '97. Proceedings of the 23rd European
Conference_Location
Southampton, UK
Type
conf
Filename
1470857
Link To Document