• DocumentCode
    439211
  • Title

    A low-voltage power and area efficient BiCMOS log-domain filter

  • Author

    Punzenberger, M. ; Enz, C.C.

  • Author_Institution
    Swiss Federal Institute of Technology (EPFL), Lausanne, Switzerland
  • fYear
    1997
  • fDate
    16-18 Sept. 1997
  • Firstpage
    256
  • Lastpage
    259
  • Abstract
    A 3rd-order Chebyshev filter based on the log-domain principle and integrated in a 1 µm BiCMOS process is presented. It has a nominal cut-off frequency of 320 kHz corresponding to a bias current of 1 µA and can be frequency tuned over almost 3 decades up to about 10 MHz. It operates with a nominal supply voltage of 1.2 V maintaining a dynamic range (DR) at 1% THD of 57 dB. For cut-off frequencies in the range of 10 kHz, the supply voltage can be reduced down to 0.9 V. The filter occupies an active area of 0.25 mm2and dissipates 23 µW, corresponding to a power consumption per pole and edge frequency of only 24 pJ. These results demonstrate the potential of log-domain filters for very low-voltage and low-power applications.
  • Keywords
    BiCMOS integrated circuits; Filters; Indium phosphide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1997. ESSCIRC '97. Proceedings of the 23rd European
  • Conference_Location
    Southampton, UK
  • Type

    conf

  • Filename
    1470912