Title :
A low-voltage power and area efficient BiCMOS log-domain filter
Author :
Punzenberger, M. ; Enz, C.C.
Author_Institution :
Swiss Federal Institute of Technology (EPFL), Lausanne, Switzerland
Abstract :
A 3rd-order Chebyshev filter based on the log-domain principle and integrated in a 1 µm BiCMOS process is presented. It has a nominal cut-off frequency of 320 kHz corresponding to a bias current of 1 µA and can be frequency tuned over almost 3 decades up to about 10 MHz. It operates with a nominal supply voltage of 1.2 V maintaining a dynamic range (DR) at 1% THD of 57 dB. For cut-off frequencies in the range of 10 kHz, the supply voltage can be reduced down to 0.9 V. The filter occupies an active area of 0.25 mm2and dissipates 23 µW, corresponding to a power consumption per pole and edge frequency of only 24 pJ. These results demonstrate the potential of log-domain filters for very low-voltage and low-power applications.
Keywords :
BiCMOS integrated circuits; Filters; Indium phosphide;
Conference_Titel :
Solid-State Circuits Conference, 1997. ESSCIRC '97. Proceedings of the 23rd European
Conference_Location :
Southampton, UK