Title :
Fully-monolithic 3V SiGe differential voltage-controlled oscillators for 5GHz and 17GHz wireless applications
Author :
Plouchart, J.-O. ; Klepser, B.-U. ; Ainspan, H. ; Soyuer, M.
Author_Institution :
IBM T.J. Watson Research Center, Yorktown Heights, NY
Abstract :
Two fully integrated and differential SiGe VCOs were designed for 5 and 17GHz wireless applications. The measured phase noise for the 5GHz VCO is -94dBc/Hz at 100kHz offset with a single-ended output power of -1dBm. It has a tuning range of 15% with a control voltage from 0 to 3V, and a figure of merit of -178.1dBc/Hz. The center frequency change is 3.3% over 200°C temperature and ±10% supply voltage variation. The 17GHz VCO exhibits a -4dBm single ended output power, a phase noise of -84dBc/Hz at 100kHz offset, and a figure of merit of -176.2dBc/Hz. It has a tuning range of 3.6%. Both circuits dissipate a total power of 66mW (22mW in core) from 3V.
Keywords :
Germanium silicon alloys; Noise measurement; Phase measurement; Phase noise; Power generation; Power measurement; Silicon germanium; Temperature control; Tuning; Voltage-controlled oscillators;
Conference_Titel :
Solid-State Circuits Conference, 1998. ESSCIRC '98. Proceedings of the 24th European
Conference_Location :
The Hague, The Netherlands
DOI :
10.1109/ESSCIR.1998.186276
