Title :
Low DC power monolithic cascode LNAs for 1.6 and 5.2 GHz wireless applications
Author :
Kucera, Jakub J. ; Lott, Urs
Author_Institution :
ETH Zürich
Abstract :
Two monolithic on chip matched cascode low noise amplifiers for 1.6 and 5.2 GHz were fabricated in a standard GaAs MESFET technology. At 1.6 GHz a 50 Ω noise figure of 1.7 dB and an associated gain of 17.5 dB was measured at a DC power dissipation of only 1.6 mW. For the 5.2 GHz LNA a 50 Ω noise figure of 2.0 dB and an associated gain of 12 dB was measured at a DC power consumption of 6 mW.
Keywords :
Energy consumption; Gain measurement; Gallium arsenide; Low-noise amplifiers; MESFETs; Noise figure; Noise measurement; Power dissipation; Power measurement; Semiconductor device measurement;
Conference_Titel :
Solid-State Circuits Conference, 1998. ESSCIRC '98. Proceedings of the 24th European
DOI :
10.1109/ESSCIR.1998.186277