DocumentCode :
439383
Title :
Reducing MOSFET 1/f noise and power consumption by "Switched biasing"
Author :
Gierkink, Sander L J ; Klumperink, Eric A M ; Van Tuijl, Ed ; Nauta, Bram
Author_Institution :
University of Twente, Enschede, Netherlands
fYear :
1999
fDate :
21-23 Sept. 1999
Firstpage :
154
Lastpage :
157
Abstract :
"Switched Biasing" is proposed as a new circuit technique that exploits an intriguing physical effect: cycling a MOS transistor between strong inversion and accumulation reduces its intrinsic 1/f noise. The technique is implemented in a 0.8µm CMOS sawtooth oscillator by periodically off-switching of the bias currents during time intervals that they are not contributing to the circuit operation. Measurements show a reduction of the 1/f noise induced phase noise by more than 8 dB, while the power consumption is reduced by more than 30% as well.
Keywords :
Circuit noise; Energy consumption; MOSFET circuits; Noise measurement; Noise reduction; Oscillators; Phase noise; Power MOSFET; Power measurement; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1999. ESSCIRC '99. Proceedings of the 25th European
Conference_Location :
Duisburg, Germany
Type :
conf
Filename :
1471119
Link To Document :
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