• DocumentCode
    439383
  • Title

    Reducing MOSFET 1/f noise and power consumption by "Switched biasing"

  • Author

    Gierkink, Sander L J ; Klumperink, Eric A M ; Van Tuijl, Ed ; Nauta, Bram

  • Author_Institution
    University of Twente, Enschede, Netherlands
  • fYear
    1999
  • fDate
    21-23 Sept. 1999
  • Firstpage
    154
  • Lastpage
    157
  • Abstract
    "Switched Biasing" is proposed as a new circuit technique that exploits an intriguing physical effect: cycling a MOS transistor between strong inversion and accumulation reduces its intrinsic 1/f noise. The technique is implemented in a 0.8µm CMOS sawtooth oscillator by periodically off-switching of the bias currents during time intervals that they are not contributing to the circuit operation. Measurements show a reduction of the 1/f noise induced phase noise by more than 8 dB, while the power consumption is reduced by more than 30% as well.
  • Keywords
    Circuit noise; Energy consumption; MOSFET circuits; Noise measurement; Noise reduction; Oscillators; Phase noise; Power MOSFET; Power measurement; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1999. ESSCIRC '99. Proceedings of the 25th European
  • Conference_Location
    Duisburg, Germany
  • Type

    conf

  • Filename
    1471119