• DocumentCode
    439413
  • Title

    A 200 MHz sub-mA RF front end for wireless hearing aid applications

  • Author

    Deiss, A. ; Pfaff, D. ; Qiuting Huang

  • Author_Institution
    Swiss Federal Institute of Technology, Zürich, Switzerland
  • fYear
    1999
  • fDate
    21-23 Sept. 1999
  • Firstpage
    274
  • Lastpage
    277
  • Abstract
    A 200 MHz RF front-end for wireless hearing aid applications has been implemented in a 0.8µm BiCMOS technology. The chip comprises a low noise amplifier, a single balanced mixer, a varactor tuned LC local oscillator with buffer and a 16/17 dual modulus prescaler. The LNA has a measured gain of 17.5dB at 200MHz. The conversion gmof the mixer is 1.88mS. The overall voltage gain and noise figure are 26dB and 5.2dB, respectively. The VCO´s phase noise is -104.7 dBc/Hz at an offset of 24kHz.
  • Keywords
    Auditory system; BiCMOS integrated circuits; Gain measurement; Local oscillators; Low-noise amplifiers; Radio frequency; Radiofrequency amplifiers; Semiconductor device measurement; Varactors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1999. ESSCIRC '99. Proceedings of the 25th European
  • Conference_Location
    Duisburg, Germany
  • Type

    conf

  • Filename
    1471149