Title :
A 200 MHz sub-mA RF front end for wireless hearing aid applications
Author :
Deiss, A. ; Pfaff, D. ; Qiuting Huang
Author_Institution :
Swiss Federal Institute of Technology, Zürich, Switzerland
Abstract :
A 200 MHz RF front-end for wireless hearing aid applications has been implemented in a 0.8µm BiCMOS technology. The chip comprises a low noise amplifier, a single balanced mixer, a varactor tuned LC local oscillator with buffer and a 16/17 dual modulus prescaler. The LNA has a measured gain of 17.5dB at 200MHz. The conversion gmof the mixer is 1.88mS. The overall voltage gain and noise figure are 26dB and 5.2dB, respectively. The VCO´s phase noise is -104.7 dBc/Hz at an offset of 24kHz.
Keywords :
Auditory system; BiCMOS integrated circuits; Gain measurement; Local oscillators; Low-noise amplifiers; Radio frequency; Radiofrequency amplifiers; Semiconductor device measurement; Varactors; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 1999. ESSCIRC '99. Proceedings of the 25th European
Conference_Location :
Duisburg, Germany
